Title :
Hot-carrier effects in thin-film fully depleted SOI MOSFET´s
Author :
Ma, Z.J. ; Wann, H.-J. ; Chan, M. ; King, J.C. ; Cheng, Y.C. ; Ko, P.K. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electric field (E/sub m/). Experimental results using SOI MOSFET´s with body contacts indicate that E/sub m/ is just a weak function of thin-film SOI thickness (T/sub si/ and that E/sub m/ can be significantly lower than in a bulk device with drain junction depth (X/sub j/) comparable to SOI´s T/sub si/. The theoretical correlation between SOI MOSFET´s gate current and substrate current are experimentally confirmed. This provides a means (I/sub G/) of studying E/sub m/ in SOI device without body contacts. Thin-film SOI MOSFET´s have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought.<>
Keywords :
SIMOX; elemental semiconductors; hot carriers; insulated gate field effect transistors; reliability; silicon; thin film transistors; SOI MOSFET; Si; TFT; breakdown voltage; channel electric field; fully depleted SOI device; gate current; hot carrier effects; hot electron reliability; substrate current; thin-film SOI thickness; thin-film device; Current measurement; Electrons; Hot carrier effects; Implants; MOS devices; MOSFET circuits; Monitoring; Substrates; Thin film devices; Transistors;
Journal_Title :
Electron Device Letters, IEEE
