• DocumentCode
    1091818
  • Title

    Method for determining the emitter and base series resistances of bipolar transistors

  • Author

    Ning, Tak H. ; Tang, Denny D.

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    31
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    409
  • Lastpage
    412
  • Abstract
    A simple method for determining both the emitter and the base series resistances of bipolar transistors from the measured I - V characteristics is described. The method is based on the observation that deviation of the base current from the ideal \\exp (qV_{BE}/kT) behavior at high currents can be attributed solely and relatively simply to series resistances. Series resistances determined by this method are given for sample high-speed digital bipolar transistors.
  • Keywords
    Bipolar transistor circuits; Bipolar transistors; Capacitance measurement; Circuit optimization; Conductivity; Contact resistance; Electrical resistance measurement; Parasitic capacitance; Scalability; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21541
  • Filename
    1483826