DocumentCode
1091818
Title
Method for determining the emitter and base series resistances of bipolar transistors
Author
Ning, Tak H. ; Tang, Denny D.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
31
Issue
4
fYear
1984
fDate
4/1/1984 12:00:00 AM
Firstpage
409
Lastpage
412
Abstract
A simple method for determining both the emitter and the base series resistances of bipolar transistors from the measured I - V characteristics is described. The method is based on the observation that deviation of the base current from the ideal
behavior at high currents can be attributed solely and relatively simply to series resistances. Series resistances determined by this method are given for sample high-speed digital bipolar transistors.
behavior at high currents can be attributed solely and relatively simply to series resistances. Series resistances determined by this method are given for sample high-speed digital bipolar transistors.Keywords
Bipolar transistor circuits; Bipolar transistors; Capacitance measurement; Circuit optimization; Conductivity; Contact resistance; Electrical resistance measurement; Parasitic capacitance; Scalability; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21541
Filename
1483826
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