Title :
Effects of plasma charging damage on the noise performance of thin-oxide MOSFET´s
Author :
Ma, Z.J. ; Shin, H. ; Ko, P.K. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
The effects of plasma charging damage on the noise properties of MOSFET´s which is a necessary consideration for high-performance analog applications were studied using 1/f noise, Random Telegraph Signal (RTS) noise and charge pumping techniques. Plasma ashing significantly increases the drain flicker noise, more with larger antenna sizes, mainly in the low-frequency and low-gate-bias regime. The observed RTS reveals that an oxide trap with a few milliseconds time constant was induced by the plasma processing. This oxide trap is located in the energy space which corresponds to the low gate bias of device. This trap may be reproduced by Fowler Nordheim stress as suggested by noise and charge pumping measurements, supporting the notion that plasma ashing damage is a result of electrical stress, not radiation, for example.<>
Keywords :
insulated gate field effect transistors; random noise; semiconductor device noise; sputter etching; 1/f noise; Fowler Nordheim stress; RTS noise; charge pumping techniques; drain flicker noise; electrical stress; low gate bias; noise performance; oxide trap; plasma ashing; plasma charging damage; plasma processing; random telegraph signal noise; thin-oxide MOSFET; 1f noise; Charge pumps; Low-frequency noise; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Stress; Telegraphy;
Journal_Title :
Electron Device Letters, IEEE
