Title :
Channel potential and channel width in narrow buried-channel MOSFET´s
Author :
Burkey, Bruce C. ; Lubberts, Gerrit ; Trabk, Eugene A. ; Tredwell, Timothy J.
Author_Institution :
Eastman Kodak Company, Rochester, NY
fDate :
4/1/1984 12:00:00 AM
Abstract :
A new method is described for determining the effective width over which incremental charge spreads in a narrow buried-channel transistor. The method is based on the transconductance in the buried-channel mode. Experimental results for effective widths and channel potential shifts are presented for MOSFET´s with effective channel widths from 2 to 10 µm. Two-dimensional numerical calculations verify the experimental results.
Keywords :
Charge coupled devices; Charge transfer; Doping; FETs; MOSFET circuits; Scanning electron microscopy; Silicon; Threshold voltage; Transconductance; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21545
