Title :
Introduction to the Special Issue on Negative Bias Temperature Instability
Author :
La Rosa, G. ; Krishnan, Arjun
fDate :
3/1/2008 12:00:00 AM
Abstract :
The nine papers in this special issue reflect the current thinking among different researchers on the controversial aspects of the negative bias temperature instability (NBTI) mechanism. The articles are summarized here.
Keywords :
CMOS technology; Degradation; High K dielectric materials; High-K gate dielectrics; Interface states; Negative bias temperature instability; Niobium compounds; Special issues and sections; Stress; Titanium compounds;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2008.919442
