DocumentCode
1091859
Title
Introduction to the Special Issue on Negative Bias Temperature Instability
Author
La Rosa, G. ; Krishnan, Arjun
Volume
8
Issue
1
fYear
2008
fDate
3/1/2008 12:00:00 AM
Firstpage
4
Lastpage
5
Abstract
The nine papers in this special issue reflect the current thinking among different researchers on the controversial aspects of the negative bias temperature instability (NBTI) mechanism. The articles are summarized here.
Keywords
CMOS technology; Degradation; High K dielectric materials; High-K gate dielectrics; Interface states; Negative bias temperature instability; Niobium compounds; Special issues and sections; Stress; Titanium compounds;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2008.919442
Filename
4463812
Link To Document