Title :
Monolithically integrated 2*2 InGaAsP/InP laser amplifier gate switch arrays
Author :
Janson, M. ; Lundgren, L. ; Rask, M. ; Stoltz, B. ; Gustavsson, M. ; Thylen, Lars
Author_Institution :
Ericsson Components AB, Kista, Sweden
fDate :
4/9/1992 12:00:00 AM
Abstract :
Monolithically integrated 2*2 semiconductor laser amplifier gate switch arrays have been fabricated and evaluated. Net positive chip gain, high extinction ratio, and high electrical isolation between the integrated laser amplifiers are reported.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor laser arrays; InGaAsP-InP; electrical isolation; extinction ratio; integrated laser amplifiers; integrated optoelectronics; net positive chip gain; semiconductor laser amplifier gate switch arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920490
