Title :
Commutating SOA capability of power DMOS FETs
Author :
Tsui, Anthony C. ; Yilmaz, Hamza ; Hshieh, F. Iuan ; Chang, Mike ; Fortier, Timothy
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
The commutating safe operating area (CSOA) of DMOS FETs is determined by the peak reverse-recovery current and the peak reapplied voltage. Both contribute to the triggering of localized turn-on of the built-in bipolar junction transistor (BJT). New DMOS FETs with lower bipolar gain and shorter minority-carrier lifetime have doubled the CSOA capability
Keywords :
characteristics measurement; commutation; insulated gate field effect transistors; power transistors; semiconductor device models; semiconductor switches; bipolar gain; built-in bipolar junction transistor; commutating safe operating area; localized turn-on; minority-carrier lifetime; peak reapplied voltage; peak reverse-recovery current; power DMOS FET; Area measurement; Circuit testing; Commutation; Driver circuits; FETs; Motor drives; Schottky diodes; Semiconductor optical amplifiers; Switching circuits; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
