DocumentCode :
1091894
Title :
Principles of operation of short-channel gallium arsenide field-effect transistor determined by Monte Carlo method
Author :
Awano, Yuji ; Tomizawa, Kazutaka ; Hashizume, Nobuo
Volume :
31
Issue :
4
fYear :
1984
fDate :
4/1/1984 12:00:00 AM
Firstpage :
448
Lastpage :
452
Abstract :
The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. 
mA/20µm, 
mS/mm, and 
GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.
mA/20µm, mS/mm, and GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.Keywords :
Boundary conditions; Computational modeling; Doping; Electrons; FETs; Gallium arsenide; Monte Carlo methods; Neodymium; Poisson equations; Semiconductor process modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21549
Filename :
1483834
Link To Document :
