• DocumentCode
    1091963
  • Title

    Deep levels at p-n and n-p AlGaAs-GaAs heterojunction interfaces

  • Author

    Rys, Andrzej ; Burrows, Ian L C ; Portnoy, William M.

  • Author_Institution
    Kansas State University, Manhattan, KS
  • Volume
    31
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    500
  • Lastpage
    505
  • Abstract
    Forward current-voltage measurements and DLTS spectra were obtained for p--n and n--p Al0.3Ga0.7As-GaAs heterodiodes. The current-voltage measurements support a tunneling current model for the p--n diodes and a diffusion-recombination current model for the n--p diodes. No deep levels were observed for the p--n structure, but two new levels at about 0.1 and 0.4 eV below the conduction band edge, and possibly zinc related, were found in the n--p devices.
  • Keywords
    Buffer layers; Current measurement; Diodes; Gallium arsenide; Heterojunctions; Impurities; Palladium; Tin; Tunneling; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21556
  • Filename
    1483841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091963