DocumentCode :
1091974
Title :
A simplified capless annealing of GaAs for MESFET applications
Author :
Pande, K.P. ; Aina, O.A. ; Lakhani, A.A. ; Nair, V.K.R. ; O´Connor, J.M.
Author_Institution :
Bendix Advanced Technology Center, Columbia, MD
Volume :
31
Issue :
4
fYear :
1984
fDate :
4/1/1984 12:00:00 AM
Firstpage :
506
Lastpage :
508
Abstract :
A simple capless annealing technique for post-implantation annealing of a GaAs wafer is described. The technique incorporates a novel boat design and uses InAs as the source of arsenic overpressure. Using this technique, wafers annealed at 850°C show mobilities in the range of 4000 cm2. V-1. S-1with over 85-percent activation for a Si dose of 
cm-2. Dopant depth profiles with peak donor densities of 
cm-3and minimal tailing were demonstrated. Electron channeling data show that crystallinity is fully restored during the anneal. 1-µm gate length MESFET\´s processed on n+-n implanted layers exhibited 
mS/mm and pinchoff voltages in the range of 3 V.
cm-2. Dopant depth profiles with peak donor densities of cm-3and minimal tailing were demonstrated. Electron channeling data show that crystallinity is fully restored during the anneal. 1-µm gate length MESFET\´s processed on n+-n implanted layers exhibited mS/mm and pinchoff voltages in the range of 3 V.Keywords :
Atomic layer deposition; Boats; Dielectric losses; Electrons; Furnaces; Gallium arsenide; Intrusion detection; MESFETs; Rapid thermal annealing; Surface morphology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21557
Filename :
1483842
Link To Document :
