DocumentCode
1091974
Title
A simplified capless annealing of GaAs for MESFET applications
Author
Pande, K.P. ; Aina, O.A. ; Lakhani, A.A. ; Nair, V.K.R. ; O´Connor, J.M.
Author_Institution
Bendix Advanced Technology Center, Columbia, MD
Volume
31
Issue
4
fYear
1984
fDate
4/1/1984 12:00:00 AM
Firstpage
506
Lastpage
508
Abstract
A simple capless annealing technique for post-implantation annealing of a GaAs wafer is described. The technique incorporates a novel boat design and uses InAs as the source of arsenic overpressure. Using this technique, wafers annealed at 850°C show mobilities in the range of 4000 cm2. V-1. S-1with over 85-percent activation for a Si dose of 
cm-2. Dopant depth profiles with peak donor densities of 
cm-3and minimal tailing were demonstrated. Electron channeling data show that crystallinity is fully restored during the anneal. 1-µm gate length MESFET\´s processed on n+-n implanted layers exhibited 
mS/mm and pinchoff voltages in the range of 3 V.
cm-2. Dopant depth profiles with peak donor densities of cm-3and minimal tailing were demonstrated. Electron channeling data show that crystallinity is fully restored during the anneal. 1-µm gate length MESFET\´s processed on n+-n implanted layers exhibited mS/mm and pinchoff voltages in the range of 3 V.Keywords
Atomic layer deposition; Boats; Dielectric losses; Electrons; Furnaces; Gallium arsenide; Intrusion detection; MESFETs; Rapid thermal annealing; Surface morphology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21557
Filename
1483842
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