DocumentCode
1092274
Title
Solar cell contact resistance—A review
Author
Schroder, Dieter K. ; Meier, Daniel L.
Author_Institution
Arizona State University, Tempe, AZ
Volume
31
Issue
5
fYear
1984
fDate
5/1/1984 12:00:00 AM
Firstpage
637
Lastpage
647
Abstract
An overview of ohmic contacts on solar cells is presented. The fundamentals of metal-semiconductor contacts are reviewed, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport. The concept of contact resistance is developed and contact resistance data for several different contact materials on both silicon and gallium arsenide over a range of doping densities are summarized. Finally, the requirements imposed by solar cells on contact resistance are detailed.
Keywords
Contact resistance; Degradation; Gallium arsenide; Ohmic contacts; Photovoltaic cells; Semiconductor devices; Semiconductor materials; Surface resistance; Thermionic emission; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21583
Filename
1483868
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