• DocumentCode
    1092274
  • Title

    Solar cell contact resistance—A review

  • Author

    Schroder, Dieter K. ; Meier, Daniel L.

  • Author_Institution
    Arizona State University, Tempe, AZ
  • Volume
    31
  • Issue
    5
  • fYear
    1984
  • fDate
    5/1/1984 12:00:00 AM
  • Firstpage
    637
  • Lastpage
    647
  • Abstract
    An overview of ohmic contacts on solar cells is presented. The fundamentals of metal-semiconductor contacts are reviewed, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport. The concept of contact resistance is developed and contact resistance data for several different contact materials on both silicon and gallium arsenide over a range of doping densities are summarized. Finally, the requirements imposed by solar cells on contact resistance are detailed.
  • Keywords
    Contact resistance; Degradation; Gallium arsenide; Ohmic contacts; Photovoltaic cells; Semiconductor devices; Semiconductor materials; Surface resistance; Thermionic emission; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21583
  • Filename
    1483868