DocumentCode :
1092312
Title :
Point-contact silicon solar cells
Author :
Swanson, Richard M. ; Beckwith, Sharleen K. ; Crane, R.A. ; Eades, Wendell D. ; Kwark, Young Hoon ; Sinton, Ronald A. ; SWIRHUN, Stanley E.
Author_Institution :
Stanford University, Stanford, CA
Volume :
31
Issue :
5
fYear :
1984
fDate :
5/1/1984 12:00:00 AM
Firstpage :
661
Lastpage :
664
Abstract :
A new type of silicon photovoltaic cell designed for high-concentration applications is presented. The device is called the point-contact-cell and shows potential for achieving energy conversion efficiencies in the neighborhood of 28 percent at the design operating point of 500× geometric concentration and 60°C cell temperature. This cell has alternating n and p regions that form a polkadot array on the bottom surface. A two-layermetallization on the bottom provides contact. Initial experimental results have yielded a cell with 20-percent efficiency at a concentration of 88.
Keywords :
Aluminum; Artificial intelligence; Contacts; Electron devices; Energy conversion; Heterojunctions; Photovoltaic cells; Potential energy; Silicon; Solid state circuits;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21586
Filename :
1483871
Link To Document :
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