DocumentCode :
1092465
Title :
The influence of surface charge and bevel angle on the blocking behavior of a high-voltage p+-n-n+device
Author :
Brieger, K.-P. ; Gerlach, Willi ; Pelka, Joachim
Author_Institution :
Technische Universitat Berlin, Berlin, West Germany
Volume :
31
Issue :
6
fYear :
1984
fDate :
6/1/1984 12:00:00 AM
Firstpage :
733
Lastpage :
738
Abstract :
The breakdown voltage of p+-n-n+devices is investigated. The two-dimensional Poisson equation is solved using the finite difference method. The questions of optimal bevelling and the influence of surface charges on the blocking capability are extensively studied. Furthermore, it is investigated to replace a small bevel angle at the n+- region by a mesa-like structure.
Keywords :
Breakdown voltage; Dielectrics; Doping profiles; Helium; Laplace equations; P-n junctions; Permittivity; Poisson equations; Surface treatment; Thyristors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21600
Filename :
1483885
Link To Document :
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