Title :
The influence of surface charge and bevel angle on the blocking behavior of a high-voltage p+-n-n+device
Author :
Brieger, K.-P. ; Gerlach, Willi ; Pelka, Joachim
Author_Institution :
Technische Universitat Berlin, Berlin, West Germany
fDate :
6/1/1984 12:00:00 AM
Abstract :
The breakdown voltage of p+-n-n+devices is investigated. The two-dimensional Poisson equation is solved using the finite difference method. The questions of optimal bevelling and the influence of surface charges on the blocking capability are extensively studied. Furthermore, it is investigated to replace a small bevel angle at the n+- region by a mesa-like structure.
Keywords :
Breakdown voltage; Dielectrics; Doping profiles; Helium; Laplace equations; P-n junctions; Permittivity; Poisson equations; Surface treatment; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21600