DocumentCode :
1092581
Title :
Threshold voltage scattering of GaAs MESFET´s fabricated on LEC-grown semi-insulating substrates
Author :
Ishii, Yasunobu ; Miyazawa, Shintaro ; Ishida, Satoru
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume :
31
Issue :
6
fYear :
1984
fDate :
6/1/1984 12:00:00 AM
Firstpage :
800
Lastpage :
804
Abstract :
Threshold voltage standard deviation ( 
) for MESFET\´s on a liquid encapsulated Czochralski (LEC) grown GaAs wafer was investigated, in connection with dislocation distribution. Threshold voltage (Vth ) scattering was found to be strongly correlated to the dislocation cell network structure in the substrate. This dislocation cell network is characteristic of the LEC-grown crystal. At large region, strongly networked dislocation cell structure was observed. In the area where dislocations distributed randomly without network structure, was small in spite of high dislocation density. For FET\´s located in the dislocation-free region inside the network cell, low drain current Ids and high Vth were recognized directly by a curve tracer. The experimental results regarding the dislocation network effect on Vth scattering are discussed along with cathodoluminescence study results.
) for MESFET\´s on a liquid encapsulated Czochralski (LEC) grown GaAs wafer was investigated, in connection with dislocation distribution. Threshold voltage (V region, strongly networked dislocation cell structure was observed. In the area where dislocations distributed randomly without network structure, was small in spite of high dislocation density. For FET\´s located in the dislocation-free region inside the network cell, low drain current IKeywords :
Crystals; FETs; Fabrication; Gallium arsenide; Ion implantation; Light scattering; Logic circuits; MESFETs; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21610
Filename :
1483895
Link To Document :
