Title :
A new self-aligned recessed-gate InP MESFET
Author :
Cheng, C.L. ; Coldren, Larry A. ; Miller, B.I. ; Liao, Andrew S.H. ; Leheny, R.F. ; Lalevic, B.
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ
fDate :
6/1/1984 12:00:00 AM
Abstract :
We describe a new self-aligned recessed-gate InP MESFET. In this structure, material selective and anisotropic etching properties of InP/InGaAsP system are utilized to alleviate the difficulties associated with channel recess and gate alignment. Using this technique a 1-µm Al-gate InP MESFET with a transconductance ∼ 110 mS/mm is demonstrated.
Keywords :
Anisotropic magnetoresistance; Epitaxial growth; Etching; FETs; Fabrication; Indium phosphide; MESFETs; Monitoring; Substrates; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21617
