Title :
Stripe geometry InP/InGaAsP lasers fabricated with deuteron bombardment
Author :
Schwartz, B. ; Focht, M.W. ; Dutta, N.K. ; Nelson, R.J. ; Besomi, P.R.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
6/1/1984 12:00:00 AM
Abstract :
Stripe geometry gain-guided InP/InGaAsP lasers have reproducibly been fabricated with deuteron bombardment. Good electrical isolation was observed in 250-µm-long laser chips, and CW thresholds as low as 105 mA have been achieved.
Keywords :
Doping; Electron devices; Epitaxial growth; Etching; Geometrical optics; Indium phosphide; MESFETs; Semiconductor device noise; Semiconductor lasers; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21618
