Breakdowns in Si JFET´s

A two-dimensional numerical analysis to clarify the breakdown phenomena in Si n-type JFET is described. In this analysis, the continuity equation for minority carriers is introduced to consider the effect of avalanche multiplication. The heat conduction equation is also taken into account to include the thermal effect on the breakdown voltage. The results obtained are: 1) the mechanisms of excess gate current (EGC), current-mode second breakdown (CSB), and thermal-mode second breakdown (TSB). 2) The effects of how channel impurity concentration Nc, drain current ID, and applied drain voltage VDGaffect EGC, CSB, and TSB are also reported.