Title :
Multikilovolt picosecond optoelectronic switching in CdS0.5Se0.5
Author :
Mathur, Veerendra K. ; Chang, C.S. ; Cao, Wei-Lou ; Rhee, M.J. ; Lee, Chi H.
Author_Institution :
University of Maryland, College Park, MD, USA
fDate :
2/1/1982 12:00:00 AM
Abstract :
Multikilovolt optoelectronic switching is reported in CdS0.5Se0.5. Two schemes are proposed for this purpose and their relative merits are discussed. CdS0.5Se0.5can hold a dc bias of a little more than 2 kV. Limitations of the device under high dc bias are explained in terms of combined effect of carrier injection and thermal runaway.
Keywords :
Cadmium materials/devices; Electrooptic switches; Conductivity; Cryogenics; Gallium arsenide; Impact ionization; Kinetic energy; Optical scattering; Pulse shaping methods; Silicon; Switches; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1982.1071525
