DocumentCode
1092919
Title
Enhanced quantum efficiency of Pd2 Si Schottky infrared diodes on 〈111〉 Si
Author
Mckee, Richard C.
Author_Institution
Westinghouse Electric Corporation, Baltimore, MD
Volume
31
Issue
7
fYear
1984
fDate
7/1/1984 12:00:00 AM
Firstpage
968
Lastpage
970
Abstract
A two-fold improvement in the infrared emission efficiency has been obtained on Pd2 Si/p-Si Schottky diodes through a proper choice of the Si substrate orientation. Photoresponse measurements on thin Pd2 Si/p-Si infrared Schottky detectors ( 
µ) yielded Fowler C1 coefficients of 66 percent/eV for Si and 32 percent/eV for Si. Leakage current versus temperature measurements at 6-V reverse bias of these Pd2 Si/p-Si diodes with guard ring structures agreed with thermionic-emission leakage-current theory using the photoresponse obtained barrier value of 0.35 eV. These results have impact on SWIR detection applications such as earth resources satellite mapping.
µ) yielded Fowler C1 coefficients of 66 percent/eV for Si and 32 percent/eV for Si. Leakage current versus temperature measurements at 6-V reverse bias of these PdKeywords
Circuits; Geometry; Infrared sensors; Leak detection; Photonic band gap; Radiation detectors; Schottky diodes; Semiconductor diodes; Semiconductor radiation detectors; Silicides;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21639
Filename
1483924
Link To Document