DocumentCode :
1092919
Title :
Enhanced quantum efficiency of Pd2 Si Schottky infrared diodes on 〈111〉 Si
Author :
Mckee, Richard C.
Author_Institution :
Westinghouse Electric Corporation, Baltimore, MD
Volume :
31
Issue :
7
fYear :
1984
fDate :
7/1/1984 12:00:00 AM
Firstpage :
968
Lastpage :
970
Abstract :
A two-fold improvement in the infrared emission efficiency has been obtained on Pd2 Si/p-Si Schottky diodes through a proper choice of the Si substrate orientation. Photoresponse measurements on thin Pd2 Si/p-Si infrared Schottky detectors ( 
µ) yielded Fowler C1 coefficients of 66 percent/eV for Si and 32 percent/eV for Si. Leakage current versus temperature measurements at 6-V reverse bias of these Pd2 Si/p-Si diodes with guard ring structures agreed with thermionic-emission leakage-current theory using the photoresponse obtained barrier value of 0.35 eV. These results have impact on SWIR detection applications such as earth resources satellite mapping.
µ) yielded Fowler C1 coefficients of 66 percent/eV for Si and 32 percent/eV for Si. Leakage current versus temperature measurements at 6-V reverse bias of these PdKeywords :
Circuits; Geometry; Infrared sensors; Leak detection; Photonic band gap; Radiation detectors; Schottky diodes; Semiconductor diodes; Semiconductor radiation detectors; Silicides;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21639
Filename :
1483924
Link To Document :
