• DocumentCode
    1092988
  • Title

    An 8.8-ns 54×54-bit multiplier with high speed redundant binary architecture

  • Author

    Makino, Hiroshi ; Nakase, Yasunobu ; Suzuki, Hiroaki ; Morinaka, Hiroyuki ; Shinohara, Hirofumi ; Mashiko, Koichiro

  • Author_Institution
    LSI Res. & Dev. Lab., Mitsubishi Electr. Corp., Itami, Japan
  • Volume
    31
  • Issue
    6
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    773
  • Lastpage
    783
  • Abstract
    A high speed redundant binary (RB) architecture, which is optimized for the fast CMOS parallel multiplier, is developed. This architecture enables one to convert a pair of partial products in normal binary (NB) form to one RE number with no additional circuit. We improved the RB adder (RBA) circuit so that it can make a fast addition of the RB partial products. We also simplified the converter circuit that converts the final RE number into the corresponding NE number. The carry propagation path of the converter circuit is carried out with only multiplexer circuits. A 54×54-bit multiplier is designed with this architecture. It is fabricated by 0.5 μm CMOS with triple level metal technology. The active area size is 3.0×3.08 mm2 and the number of transistors is 78,800. This is the smallest number for all 54×54-bit multipliers ever reported. Under the condition of 3.3 V supply voltage, the chip achieves 8.8 ns multiplication time. The power dissipation of 540 mW is estimated for the operating frequency of 100 MHz. These are, so far, the fastest speed and the lowest power for 54×54-bit multipliers with 0.5-μm CMOS
  • Keywords
    CMOS logic circuits; multiplying circuits; parallel architectures; redundant number systems; 0.5 micron; 100 MHz; 3.3 V; 54 bit; 540 mW; 8.8 ns; CMOS parallel multiplier; RB adder; RB partial products; carry propagation; converter circuit; high speed redundant binary architecture; multiplexer circuits; triple level metal technology; Adders; Binary trees; CMOS technology; Compressors; Delay; Frequency estimation; Integrated circuit interconnections; Multiplexing; Niobium; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.509863
  • Filename
    509863