DocumentCode
1092988
Title
An 8.8-ns 54×54-bit multiplier with high speed redundant binary architecture
Author
Makino, Hiroshi ; Nakase, Yasunobu ; Suzuki, Hiroaki ; Morinaka, Hiroyuki ; Shinohara, Hirofumi ; Mashiko, Koichiro
Author_Institution
LSI Res. & Dev. Lab., Mitsubishi Electr. Corp., Itami, Japan
Volume
31
Issue
6
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
773
Lastpage
783
Abstract
A high speed redundant binary (RB) architecture, which is optimized for the fast CMOS parallel multiplier, is developed. This architecture enables one to convert a pair of partial products in normal binary (NB) form to one RE number with no additional circuit. We improved the RB adder (RBA) circuit so that it can make a fast addition of the RB partial products. We also simplified the converter circuit that converts the final RE number into the corresponding NE number. The carry propagation path of the converter circuit is carried out with only multiplexer circuits. A 54×54-bit multiplier is designed with this architecture. It is fabricated by 0.5 μm CMOS with triple level metal technology. The active area size is 3.0×3.08 mm2 and the number of transistors is 78,800. This is the smallest number for all 54×54-bit multipliers ever reported. Under the condition of 3.3 V supply voltage, the chip achieves 8.8 ns multiplication time. The power dissipation of 540 mW is estimated for the operating frequency of 100 MHz. These are, so far, the fastest speed and the lowest power for 54×54-bit multipliers with 0.5-μm CMOS
Keywords
CMOS logic circuits; multiplying circuits; parallel architectures; redundant number systems; 0.5 micron; 100 MHz; 3.3 V; 54 bit; 540 mW; 8.8 ns; CMOS parallel multiplier; RB adder; RB partial products; carry propagation; converter circuit; high speed redundant binary architecture; multiplexer circuits; triple level metal technology; Adders; Binary trees; CMOS technology; Compressors; Delay; Frequency estimation; Integrated circuit interconnections; Multiplexing; Niobium; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.509863
Filename
509863
Link To Document