DocumentCode :
1092993
Title :
Field and related semiconductor-surface and equilibrium-step-junction variables in terms of the general solution
Author :
Warner, R.M., Jr. ; Jindal, R.P. ; Grung, B.L.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
31
Issue :
7
fYear :
1984
fDate :
7/1/1984 12:00:00 AM
Firstpage :
994
Lastpage :
996
Abstract :
A depletion-approximation replacement offered recently employs one of two asymptotic functions of a universal curve of potential versus position to define a spatial origin, which is then used to write approximate-analytic expressions of simple form for the universal curve. Here we extend analogous treatment to additional functions, writing expressions as a function of normalized potential and of normalized position.
Keywords :
Calibration; Helium; Laboratories; Poisson equations; Semiconductor process modeling; Surface treatment; Writing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21645
Filename :
1483930
Link To Document :
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