• DocumentCode
    1093001
  • Title

    Two-dimensional numerical analysis of a silicon magnetic field sensor

  • Author

    Baltes, H.P. ; Andor, L. ; Nathan, A. ; Schmidt-weinma, H.G.

  • Author_Institution
    University of Alberta, Edmonton, Alta., Canada
  • Volume
    31
  • Issue
    7
  • fYear
    1984
  • fDate
    7/1/1984 12:00:00 AM
  • Firstpage
    996
  • Lastpage
    999
  • Abstract
    We present two-dimensional numerical solutions of the coupled, nonlinear, partial differential equations governing the electric potential, carrier drift, diffusion, generation, and recombination in a finite semiconductor slab in the presence of a magnetic field. This enables device modeling for general geometries, doping levels, and injection conditions, where the effect of the magnetic field cannot be expressed simply in terms of Hall voltage, Lorentz deflection, or magnetoconcentration.
  • Keywords
    Couplings; Electric potential; Magnetic fields; Magnetic sensors; Numerical analysis; Partial differential equations; Radiative recombination; Semiconductor process modeling; Silicon; Slabs;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21646
  • Filename
    1483931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093001