DocumentCode :
1093001
Title :
Two-dimensional numerical analysis of a silicon magnetic field sensor
Author :
Baltes, H.P. ; Andor, L. ; Nathan, A. ; Schmidt-weinma, H.G.
Author_Institution :
University of Alberta, Edmonton, Alta., Canada
Volume :
31
Issue :
7
fYear :
1984
fDate :
7/1/1984 12:00:00 AM
Firstpage :
996
Lastpage :
999
Abstract :
We present two-dimensional numerical solutions of the coupled, nonlinear, partial differential equations governing the electric potential, carrier drift, diffusion, generation, and recombination in a finite semiconductor slab in the presence of a magnetic field. This enables device modeling for general geometries, doping levels, and injection conditions, where the effect of the magnetic field cannot be expressed simply in terms of Hall voltage, Lorentz deflection, or magnetoconcentration.
Keywords :
Couplings; Electric potential; Magnetic fields; Magnetic sensors; Numerical analysis; Partial differential equations; Radiative recombination; Semiconductor process modeling; Silicon; Slabs;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21646
Filename :
1483931
Link To Document :
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