A new method based on the superposition principle for the calculation of the two-dimensional potential in a buried-channel charge-coupled device

An analytical method for computing the two-dimensional potential profile in buried-channel charge-coupled devices with zero gate separation is presented. The method invokes the superposition principle in all three major regions of the device, namely: oxide, buried n-layer, and p-type substrate. This leads to a solution for the potential distribution in these regions which satisfies all boundary conditions. One of the superposed potentials appears in the homogeneous form of Poisson´s equation and it is demonstrated here that for the device structure under consideration, a simple method of solving for this potential results from the use of conformal mapping.