A 2×2 analog memory implemented with a special layout injector

Using floating gate MOSFETs, we have designed a 2×2 analog memory, which is expandable to any size array. The reduced programming voltage due to the innovative floating gate MOSFETs enables us to construct the analog memory with a standard double poly n-well process. In addition, a novel programming algorithm is presented. This method will contribute not only to a reduced total programming time, but also to a prolonged lifetime of the memory. The high voltage program/erase pulses are arranged to minimize the disturbance of nonselected cells. The resolution of a memory cell has been found to be 10 mV over a range of 1.25 V to 2 V which is equivalent to the information content of 6 digital cells