• DocumentCode
    1093112
  • Title

    InP MISFET´s with Al2O3/Native Oxide double-layer gate insulators

  • Author

    Sawada, Takayuki ; Itagaki, Shin ; Hasegawa, Hideki ; Ohno, Hideo

  • Author_Institution
    Hokkaido University, Sapporo, Japan
  • Volume
    31
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    1038
  • Lastpage
    1043
  • Abstract
    Enhancement-mode InP MISFET´s with anodic Al2O3/ native oxide double-layer for gate insulator are fabricated by anodization processes in electrolyte and in oxygen plasma. Such gate structure greatly improves the device performance; high effective electron mobilities of 1500-3000 cm2/V . s and marked reduction of drain current instability were simultaneously achieved. This device performance is consistent with the interface properties obtained by C-V measurements. InP MISFET inverters as well as ring oscillators are also fabricated to demonstrate the stability of the circuit at low frequency and to show the capability of the process employed.
  • Keywords
    Capacitance-voltage characteristics; Electron mobility; Indium phosphide; Insulation; Inverters; MISFETs; Plasma devices; Plasma measurements; Plasma properties; Ring oscillators;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21657
  • Filename
    1483942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093112