Recent advances in device processing and packaging of high-power pulsed GaAs double-drift IMPATT´s at X-band

High-power multimesa GaAs hybrid double-drift IMPATT\´s have been developed for pulsed operation at X-band. The diodes are fabricated from GaAs material grown by a novel "infinite" solution liquid phase epitaxial process. The use of specialized rapid thermal processing and packaging techniques has enabled the fabrication of high-power IMPATT oscillators that have delivered peak output powers of over 40 W with 20-percent efficiency under pulsed RF operation at X-band frequencies. The diodes are constructed with an integral heat sink and bounded with a Au-Sn eutectic solder in a microwave package.