• DocumentCode
    1093169
  • Title

    Drain bias dependence of the frequency limit of GaAs FET´s

  • Author

    Hak Lee, Soong ; Dawson, Dale E. ; Dickens, Lawrence E.

  • Author_Institution
    Westinghouse Electric Company, Baltimore, MD
  • Volume
    31
  • Issue
    8
  • fYear
    1984
  • fDate
    8/1/1984 12:00:00 AM
  • Firstpage
    1068
  • Lastpage
    1071
  • Abstract
    Microwave fTmeasurements were made and compared to a model that confirmed lateral spreading as proposed by Wemple et al. to explain the increased breakdown voltage of GaAs power FET´s compared to bulk breakdown. The model provides a useful tool for device diagnosis as well as evaluation of the frequency limit fT.
  • Keywords
    Breakdown voltage; Charge measurement; Current measurement; Electrodes; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Helium; Microwave measurements;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21662
  • Filename
    1483947
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093169