A new open diffusion technique using evaporated Zn3P2and its application to a lateral p-n-p transistor

Author

Schmitt, Felix ; Man Su, Li ; Franke, Dieter ; Kaumanns, R. ; Kaumanns, Roland

Author_Institution

Heinrich-Hertz-Institut für Nachrichtentechnik Berlin, Germany

Volume

Issue

fYear

1984

fDate

8/1/1984 12:00:00 AM

Firstpage

1083

Lastpage

1085

Abstract

This paper reports a new open diffusion technique with a thin vacuum-deposited Zn3P2layer covered by an Al2O3layer. The diffusion in

Keywords

Crystals; Degradation; Diffusion processes; Etching; Indium phosphide; Optical devices; P-n junctions; Temperature; Vacuum technology; Zinc;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1984.21665

Filename

1483950

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