• DocumentCode
    1093254
  • Title

    Impact of thermal NH3-nitridation on dielectric properties of ultrathin SiO2 films

  • Author

    Fukuda, Hiroshi ; Yasuda, Makoto ; Iwabuchi, T.

  • Author_Institution
    Oki Electr. Ind. Co. Ltd., Tokyo, Japan
  • Volume
    28
  • Issue
    8
  • fYear
    1992
  • fDate
    4/9/1992 12:00:00 AM
  • Firstpage
    796
  • Lastpage
    797
  • Abstract
    The dielectric properties of rapid thermally NH3-nitrided (RTN) ultrathin ( approximately=5 nm) SiO2 films have been investigated. High-field endurance characteristics indicate that after Fowler-Nordheim electron injection, both the low-field leakage current and electron trap density increase. Moreover, the oxide leakage is strongly dependent on the NH3-nitridation time. These results indicate that in ultrathin SiO2 the oxide leakage is a result of trap-assisted tunnelling, leading to a breakdown event when a critical trap density is reached.
  • Keywords
    dielectric properties of solids; electron traps; insulating thin films; metal-insulator-semiconductor devices; nitridation; tunnelling; Fowler-Nordheim electron injection; NH 3; SiO 2; breakdown event; critical trap density; dielectric properties; electron trap density; endurance characteristics; low-field leakage current; oxide leakage; thermal nitridation; trap-assisted tunnelling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920502
  • Filename
    133141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093254