DocumentCode
1093290
Title
A new AC measurement technique to accurately determine MOSFET constants
Author
Thoma, Morgan J. ; Westgate, Charles R.
Author_Institution
The Johns Hopkins University, Baltimore, MD
Volume
31
Issue
9
fYear
1984
fDate
9/1/1984 12:00:00 AM
Firstpage
1113
Lastpage
1116
Abstract
An ac measurement technique to accurately determine 
, the mobility degradation coefficient Θ, and the drain-source resistance 
is presented, and results are given for a PMOS transistor array with constant width (40 µm) and variable channel lengths (ranging from 0.8 to 4 µm). Because the proposed method does not require significant data reduction, it offers a number of advantages over previously published techniques. In addition, the method yields a refined value for the threshold voltage by curve fitting the measured and computed gate characteristics with VT as a parameter. This procedure reduces the sensitivity of the technique to small errors made in a threshold-voltage measurement.
, the mobility degradation coefficient Θ, and the drain-source resistance is presented, and results are given for a PMOS transistor array with constant width (40 µm) and variable channel lengths (ranging from 0.8 to 4 µm). Because the proposed method does not require significant data reduction, it offers a number of advantages over previously published techniques. In addition, the method yields a refined value for the threshold voltage by curve fitting the measured and computed gate characteristics with VKeywords
Curve fitting; Degradation; MOSFET circuits; Measurement techniques; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21673
Filename
1483958
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