DocumentCode :
1093362
Title :
Substrate resistance calculation for latchup modeling
Author :
Terrill, Kyle W. ; Hu, Chenming
Author_Institution :
University of California, Berkeley, CA
Volume :
31
Issue :
9
fYear :
1984
fDate :
9/1/1984 12:00:00 AM
Firstpage :
1152
Lastpage :
1155
Abstract :
The input and output circuits are the main triggering mechanisms of latchup in CMOS technology. We have studied the triggering capability of these circuits and the effectiveness of using guard rings to suppress triggering. We present a method to estimate the substrate potential induced by a triggering current in these circuits and the effect of using guard rings to prevent latchup. It was necessary to include effects of the field-threshold implant to obtain good agreement between theory and measurements.
Keywords :
CMOS technology; Circuits; Conductivity; Contact resistance; Diodes; Forward contracts; Protection; Surface resistance; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21680
Filename :
1483965
Link To Document :
بازگشت