Title :
Deep levels in MOCVD Al0.48In0.52As/InP
Author :
Luo, Jack K. ; Thomas, Holly ; Morris, I.L.
Author_Institution :
Univ. of Wales, Coll. of Cardiff, UK
fDate :
4/9/1992 12:00:00 AM
Abstract :
Defects in Al0.48In0.52As grown by MOCVD have been investigated by DLTS measurement. Four electron traps were observed in as-grown AlInAs, and one further in samples after annealing at TA>450 degrees C. The densities of the defects E1, E2 and E3 were found to decrease with an increase in growth temperature, and are suggested to result from excess arsenic, for example an interstitial arsenic atom. Defect E4 was not observed consistently but had a high surface concentration, which may be related to the growth contamination.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; deep level transient spectroscopy; deep levels; electron traps; indium compounds; Al 0.48In 0.52As-InP; DLTS measurement; III-V semiconductors; InP; MOCVD; annealing; defect densities; electron traps; growth contamination; growth temperature; surface concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920503
