DocumentCode :
1093394
Title :
Optimization of the Schottky varactor for frequency multiplier applications at submillimeter wavelengths
Author :
Louhi, Jyrki T. ; Räisänen, Antti V.
Author_Institution :
Radio Lab., Helsinki Univ. of Technol., Espoo, Finland
Volume :
6
Issue :
6
fYear :
1996
fDate :
6/1/1996 12:00:00 AM
Firstpage :
241
Lastpage :
242
Abstract :
Schottky varactor frequency multipliers are used to generate the all-solid-state local oscillator power at submillimeter wavelengths. The aim of this work was to develop a routine that can be used to optimize the electrical and geometrical parameters of the Schottky varactor in order to maximize the output power of the submillimeter wave Schottky varactor frequency multiplier. The optimization of the epitaxial layer thickness and doping density and the anode area significantly increases the maximum theoretical output power at the THz range
Keywords :
Schottky diodes; frequency multipliers; optimisation; submillimetre wave diodes; varactors; Schottky varactor optimisation; THF diode; THz range; anode area; doping density; electrical parameters; epitaxial layer thickness; frequency multiplier applications; geometrical parameters; local oscillator power; output power; submillimeter wavelengths; Anodes; Doping; Electrons; Epitaxial layers; Frequency; Local oscillators; Neodymium; Power generation; Varactors; Voltage;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.509902
Filename :
509902
Link To Document :
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