Title :
Comparison of theoretical and experimental results for millimeter-wave GaAs IMPATT´s
Author :
Mains, Richard K. ; El-Gabaly, Moustafa A. ; Haddad, George I. ; Sun, J.P.
Author_Institution :
University of Michigan, Ann Arbor, MI
fDate :
9/1/1984 12:00:00 AM
Abstract :
Simulations are performed of GaAs IMPATT diodes for which experimental results are available at 20, 33, and 44 GHz. At each frequency, simulations are performed using both the drift-diffusion approximation and the energy-momentum transport model. It is found that inclusion of energy and momentum relaxation effects yields better agreement with experiment.
Keywords :
Computational modeling; Diodes; Doping profiles; Equations; Finite difference methods; Gallium arsenide; Low voltage; Performance analysis; Predictive models; Radio frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21699
