DocumentCode :
1093612
Title :
Design and performance of a new static induction thyristor—The gated V-groove p-i-n diode
Author :
Fisher, Carole A. ; Paxman, David H. ; Slatter, John A G
Author_Institution :
Philips Research Laboratories, Redhill, Surrey, England
Volume :
31
Issue :
9
fYear :
1984
fDate :
9/1/1984 12:00:00 AM
Firstpage :
1299
Lastpage :
1308
Abstract :
A new form of static induction thyristor is described. An account is given of models which predict the ON-state and forward blocking characteristics. Experimental results are compared with theory and conclusions drawn as to the performance of the structure relative to other SIT devices, the GTO thyristor, and the power MOS transistor.
Keywords :
Anodes; Cathodes; Charge carrier processes; Etching; P-i-n diodes; Plasma applications; Plasma devices; Switches; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21703
Filename :
1483988
Link To Document :
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