DocumentCode
1093637
Title
Temperature dependence of drain-induced barrier lowering in deep submicrometre MOSFETs
Author
Fikry, Wael ; Ghibaudo, Gerard ; Dutoit, M.
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERF, Grenoble
Volume
30
Issue
11
fYear
1994
fDate
5/26/1994 12:00:00 AM
Firstpage
911
Lastpage
912
Abstract
A new method for extracting the drain-induced barrier lowering (DIBL) parameter in an MOS transistor is proposed. This method is used to study the influence of temperature on the DIBL effect. It is found that the DIBL parameter is almost independent of temperature between 50 and 300 K. This method makes it also possible to recalculate the intrinsic output characteristics that the device would have in the absence of DIBL, and, in turn, to evaluate the intrinsic device saturation parameters
Keywords
insulated gate field effect transistors; semiconductor device testing; 50 to 300 K; DIBL effect; DIBL parameter; MOS transistor; deep submicrometre MOSFETs; drain-induced barrier lowering; intrinsic device saturation parameters; intrinsic output characteristics; temperature dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940577
Filename
287439
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