• DocumentCode
    1093657
  • Title

    Avalanche breakdown in (AlxGa1x)0.52 In0.48P pin junctions

  • Author

    David, J.P.R. ; Hopkinson, Mark ; Pate, M.A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ.
  • Volume
    30
  • Issue
    11
  • fYear
    1994
  • fDate
    5/26/1994 12:00:00 AM
  • Firstpage
    907
  • Lastpage
    909
  • Abstract
    The avalanche breakdown behaviour of (AlxGa1-x )0.52In0.48P has been investigated by growing a series of pin diode structures and by measuring the reverse leakage currents until the onset of avalanche breakdown. Comparing the breakdown voltage (Vbd) with that of GaAs, significant increases are obtained, with AlInP having in excess of twice the Vbd of GaAs
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche diodes; gallium compounds; indium compounds; leakage currents; p-i-n diodes; semiconductor junctions; (AlxGa1x)0.52In0.48P pin junctions; AlGaInP; avalanche breakdown; breakdown voltage; pin diode structures; reverse leakage currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940620
  • Filename
    287441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093657