1 W/mm power pseudomorphic HFET with optimised recess technology

Author

Gaquiere, Christopher ; Theron, Didier ; Bonte, B. ; Crosnier, Y.

Author_Institution

IEMN, Villeneuve d´Ascq

Volume

30

Issue

11

fYear

1994

fDate

5/26/1994 12:00:00 AM

Firstpage

904

Lastpage

906

Abstract

The authors report record DC characteristics and RF performance of a power double heterostructure (DH) pseudomorphic (PM) InGaAs quantum well HFET. The device, with a 0.3×70 μm² gate, exhibits an intrinsic transconductance as high as 720 mS/mm, a maximum current density of ~1 A/mm and delivers a state-of-the-art output power density of 1 W/mm with 5.7 dB linear gain and 38% power added efficiency at 33 GHz. A detailed analysis of the technological aspects and electrical characteristics of the device is proposed to explain these excellent performances

Keywords

III-V semiconductors; current density; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; semiconductor quantum wells; 33 GHz; 38 percent; 5.7 dB; InGaAs; RF performance; electrical characteristics; intrinsic transconductance; linear gain; maximum current density; optimised recess technology; power added efficiency; power double heterostructure pseudomorphic InGaAs quantum well HFET; power pseudomorphic HFET; record DC characteristics; state-of-the-art output power density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940593

Filename

287443