• DocumentCode
    1093694
  • Title

    Thermo-optical switching in Si/Si1-xGex distributed Bragg reflectors

  • Author

    Fernando, C. ; Janz, Siegfried ; Normandin, R. ; Wight, Jim S.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont.
  • Volume
    30
  • Issue
    11
  • fYear
    1994
  • fDate
    5/26/1994 12:00:00 AM
  • Firstpage
    901
  • Lastpage
    903
  • Abstract
    The authors report thermo-optical switching in a 92 layer Si/Si 0.7Ge0.3 distributed Bragg reflector (DBR) grown by molecular beam epitaxy. Depending on the layer periodicity, this structure exhibited a positive or negative reflectivity switching λ=1.06 μm, with a switch-on time of less than 20 ns and reflectivity contrast ratios greater than 50%
  • Keywords
    Ge-Si alloys; elemental semiconductors; integrated optics; mirrors; molecular beam epitaxial growth; optical switches; semiconductor growth; semiconductor materials; silicon; thermoreflectance; 1.06 micron; 20 ns; Si-SiGe; Si/Si1-xGex heterostructure; distributed Bragg reflectors; molecular beam epitaxy; reflectivity contrast ratios; thermo-optical switching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940617
  • Filename
    287445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093694