DocumentCode :
1093786
Title :
A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction
Author :
Yu, K.L. ; Koren, U. ; Chen, T.R. ; Yariv, A.
Author_Institution :
California Institute of Technology, Pasadena, CA, USA
Volume :
18
Issue :
5
fYear :
1982
fDate :
5/1/1982 12:00:00 AM
Firstpage :
817
Lastpage :
819
Abstract :
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial (LPE) growth process, and the p-n junction is formed by a lateral Zn diffusion. The active layer inside the groove provides a real index waveguide. Threshold currents as low as 14 mA with 300 μm cavity length are obtained. A single longitudinal mode at 1.3 μm up to 
is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 μm. This laser is suitable for monolithic integration with other optoelectronic devices.
is observed. The lasers operate with a single lateral mode when the active region width is less than 2.5 μm. This laser is suitable for monolithic integration with other optoelectronic devices.Keywords :
Gallium materials/lasers; Fiber lasers; Gallium arsenide; Indium phosphide; Laser modes; Optical waveguides; Semiconductor lasers; Substrates; Threshold current; Waveguide lasers; Zinc;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1982.1071620
Filename :
1071620
Link To Document :
