DocumentCode
1093801
Title
Some aspects of hot-electron aging in MOSFET´s
Author
Radojcic, Riko
Author_Institution
Burroughs Corporation, MCG, San Diego, CA
Volume
31
Issue
10
fYear
1984
fDate
10/1/1984 12:00:00 AM
Firstpage
1381
Lastpage
1386
Abstract
The injection of hot carriers from Si into SiO_{2} in various MOSFET structures is characterized via direct measurements of gate current. A method of mapping gate currents as a function of both gate and drain bias potentials is described. The deterioration of device parameters with hot-electron injection is also characterized, and it is proposed that the rate of aging is a function not only of the injection and trapping efficiencies, but also of the physical location of the trapped charge.
Keywords
Aging; Current measurement; Distortion measurement; Electric variables measurement; Electrons; MOSFET circuits; Performance evaluation; Stress; Temperature; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21720
Filename
1484005
Link To Document