Title :
Some aspects of hot-electron aging in MOSFET´s
Author_Institution :
Burroughs Corporation, MCG, San Diego, CA
fDate :
10/1/1984 12:00:00 AM
Abstract :
The injection of hot carriers from Si into SiO_{2} in various MOSFET structures is characterized via direct measurements of gate current. A method of mapping gate currents as a function of both gate and drain bias potentials is described. The deterioration of device parameters with hot-electron injection is also characterized, and it is proposed that the rate of aging is a function not only of the injection and trapping efficiencies, but also of the physical location of the trapped charge.
Keywords :
Aging; Current measurement; Distortion measurement; Electric variables measurement; Electrons; MOSFET circuits; Performance evaluation; Stress; Temperature; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21720
