DocumentCode :
1093857
Title :
An analytic study of (GaAl)As gain guided lasers at threshold
Author :
Streifer, William ; Burnham, Robert D. ; Scifres, Don R.
Author_Institution :
Xerox Palo Alto Research Center, Palo Alto, CA, USA
Volume :
18
Issue :
5
fYear :
1982
fDate :
5/1/1982 12:00:00 AM
Firstpage :
856
Lastpage :
864
Abstract :
An analysis of gain-guided diode lasers at threshold is presented. After describing the formulation, the effects of charge induced real refractive index antiguiding and gain-charge density relations are studied in detail. Their influence on the threshold current, modal distributions, and the lateral fax-field radiation patterns is discussed. Next a "model" laser is defined and each parameter including dimensions, compositions, stripewidth, diffusion constants, current spreading resistance, and facet reflectivities is individually varied to determine the resulting modifications in laser properties.
Keywords :
Gallium materials/lasers; Diode lasers; Laser modes; Optical devices; Optical losses; Optical propagation; Optical refraction; Optical variables control; Reflectivity; Refractive index; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1982.1071627
Filename :
1071627
Link To Document :
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