Title :
Low-threshold, highly reliable 630 nm-band AlGaIP visible laser diodes with AlInP buried waveguide
Author :
Kobayashi, R. ; Hotta, H. ; Miyasaka, F. ; Hara, K. ; Kobayashi, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan
fDate :
5/9/1996 12:00:00 AM
Abstract :
Low-threshold, highly reliable 630 nm-band AlGaInP visible laser diodes have been developed by employing a low-loss optical waveguide buried in the AlInP layer. A low-threshold current of 19 mA at 25°C is obtained with a cavity length of 310 μm. This current is the lowest value for 630 nm-band AlGaInP visible laser diodes, to our knowledge. Our AlInP-buried laser diodes with a cavity length of 500 μm operated over 7000 h without significant degradation at 60°C and 5 mW
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; semiconductor lasers; waveguide lasers; 19 mA; 25 degC; 310 micron; 5 mW; 500 micron; 60 degC; 630 nm; AlGaP-AlInP; III-V semiconductors; buried waveguide; cavity length; degradation; low-loss optical waveguide; threshold current; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960605
