Title :
High power operation of InGaAsP/InP multiquantum well DFB lasers at 1.55 μm wavelength
Author :
Chen, T.R. ; Ungar, J. ; Iannelli, J. ; Oh, S. ; Luong, H. ; Bar-Chaim, N.
Author_Institution :
Ortel Corp., Alhambra, CA, USA
fDate :
5/9/1996 12:00:00 AM
Abstract :
108 mW CW output power at room temperature has been realised in a strained multiquantum well InGaAsP/InP DFB laser at 1.55 μm. The lasers also possess low threshold, current low intensity noise, and excellent high temperature behaviour with an output power of ~20 mW at 110°C
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser noise; quantum well lasers; 1.55 micrometre; 110 degC; 20 mW; CW output power; InGaAsP-InP; high power operation; high temperature behaviour; intensity noise; multiquantum well DFB lasers; output power; room temperature; strained multiquantum well; threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960601
