Title :
Oxide-confined vertical-cavity laser with additional etched void confinement
Author :
Deng, H. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
5/9/1996 12:00:00 AM
Abstract :
A vertical-cavity surface-emitting laser that incorporates oxide confinement with additional etched void photon confinement is described. A room-temperature continuous-wave threshold of 75 μA for a 3.5 μm-diameter lateral device size is achieved
Keywords :
etching; optical fabrication; semiconductor lasers; surface emitting lasers; 3.5 micron; 75 muA; etched void photon confinement; oxide confinement; room-temperature continuous-wave threshold current; vertical-cavity surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960579
