Title : 
Transition from the bipolar to the bulk-barrier transistor
         
        
            Author : 
Mader, Hermann ; Müller, Rudolf
         
        
            Author_Institution : 
Fachhochschule München, Fachbereich Elektrotechnik, Munich, Germany
         
        
        
        
        
            fDate : 
10/1/1984 12:00:00 AM
         
        
        
        
            Abstract : 
In a conventional bipolar transistor the current is limited by diffusion in the neutral base region. In the bulk-barrier transistor the current is determined by diffusion or thermionic emission over a potential barrier. This type of operation occurs in bipolar transistors if the width of the neutral base is below a definite value. The limit between bipolar- and bulk-barrier mode is defined. The current voltage-characteristic as well as the small signal equivalent circuit are given.
         
        
            Keywords : 
Bipolar transistors; Capacitance; Charge carriers; Current density; Cutoff frequency; Doping; Electron emission; Spontaneous emission; Thermionic emission; Voltage;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/T-ED.1984.21731