DocumentCode :
1093916
Title :
Transition from the bipolar to the bulk-barrier transistor
Author :
Mader, Hermann ; Müller, Rudolf
Author_Institution :
Fachhochschule München, Fachbereich Elektrotechnik, Munich, Germany
Volume :
31
Issue :
10
fYear :
1984
fDate :
10/1/1984 12:00:00 AM
Firstpage :
1447
Lastpage :
1454
Abstract :
In a conventional bipolar transistor the current is limited by diffusion in the neutral base region. In the bulk-barrier transistor the current is determined by diffusion or thermionic emission over a potential barrier. This type of operation occurs in bipolar transistors if the width of the neutral base is below a definite value. The limit between bipolar- and bulk-barrier mode is defined. The current voltage-characteristic as well as the small signal equivalent circuit are given.
Keywords :
Bipolar transistors; Capacitance; Charge carriers; Current density; Cutoff frequency; Doping; Electron emission; Spontaneous emission; Thermionic emission; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21731
Filename :
1484016
Link To Document :
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