• DocumentCode
    1093936
  • Title

    New mounting technique for two-terminal millimetre-wave devices

  • Author

    Bauer, Thomas

  • Author_Institution
    Tech. Univ. Munchen
  • Volume
    30
  • Issue
    11
  • fYear
    1994
  • fDate
    5/26/1994 12:00:00 AM
  • Firstpage
    868
  • Lastpage
    869
  • Abstract
    A new mounting technique for two-terminal devices is presented which minimises parasitic elements and improves thermal heat resistance. Monolithic fabrication of the structure leads to high reproducibility. First experimental results for power generation at W-band frequencies with GaAs Impatt diodes are reported
  • Keywords
    III-V semiconductors; IMPATT diodes; gallium arsenide; semiconductor technology; thermal resistance; GaAs; GaAs Impatt diodes; W-band frequencies; monolithic fabrication; mounting technique; parasitic elements; power generation; reproducibility; thermal heat resistance; two-terminal millimetre-wave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940575
  • Filename
    287468