DocumentCode
1093936
Title
New mounting technique for two-terminal millimetre-wave devices
Author
Bauer, Thomas
Author_Institution
Tech. Univ. Munchen
Volume
30
Issue
11
fYear
1994
fDate
5/26/1994 12:00:00 AM
Firstpage
868
Lastpage
869
Abstract
A new mounting technique for two-terminal devices is presented which minimises parasitic elements and improves thermal heat resistance. Monolithic fabrication of the structure leads to high reproducibility. First experimental results for power generation at W-band frequencies with GaAs Impatt diodes are reported
Keywords
III-V semiconductors; IMPATT diodes; gallium arsenide; semiconductor technology; thermal resistance; GaAs; GaAs Impatt diodes; W-band frequencies; monolithic fabrication; mounting technique; parasitic elements; power generation; reproducibility; thermal heat resistance; two-terminal millimetre-wave devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940575
Filename
287468
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