DocumentCode :
1093980
Title :
Operating principles of bipolar transistor magnetic sensors
Author :
Vinal, Albert W. ; Masnari, N.A.
Author_Institution :
IBM, Research Triangle Park, NC
Volume :
31
Issue :
10
fYear :
1984
fDate :
10/1/1984 12:00:00 AM
Firstpage :
1486
Lastpage :
1494
Abstract :
Dual-collector bipolar transistor structures have been evaluated and found to be sensitive to an applied magnetic field. In particular, the magnetic field results in unequal currents to the two collectors. The output signal is taken as a differential voltage developed across the output load resistors. The mechanism giving rise to the unequal collector currents appears to be emitter-injection modulation caused by the applied magnetic field. The magnetic field causes the injection from one portion of the emitter to be enhanced while suppressing injection elsewhere thus setting up unequal currents to the two collectors. A simplified theory is presented to explain the behavior of these devices. The theory is found to be in general agreement with experimental results obtained from a number of different device configurations.
Keywords :
Bipolar transistors; Magnetic devices; Magnetic field induced strain; Magnetic field measurement; Magnetic fields; Magnetic modulators; Magnetic sensors; Magnetic separation; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21737
Filename :
1484022
Link To Document :
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