DocumentCode
1094000
Title
An improved forward I-V method for nonideal Schottky diodes with high series resistance
Author
Lien, C.D. ; So, F.C.T. ; Nicolet, M.A.
Author_Institution
California Institute of Technology, Pasadena, CA
Volume
31
Issue
10
fYear
1984
fDate
10/1/1984 12:00:00 AM
Firstpage
1502
Lastpage
1503
Abstract
Two methods are described to obtain the value of the series resistance 
of a Schottky diode from its forward I-V characteristic. The value of 
is then used to plot the curve ln ( 
) versus 
which becomes a straight line even if ln 
versus 
does not. The ideality factor 
and the Schottky-barrier height 
of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of , 2) many data points are used over the whole data range which raises the accuracy of the results, and 3) the validity of constant assumption can be checked by the linearity of the ln versus VD curve. The methods are illustrated on the experimental data of a real diode.
of a Schottky diode from its forward I-V characteristic. The value of is then used to plot the curve ln ( ) versus which becomes a straight line even if ln versus does not. The ideality factor and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of , 2) many data points are used over the whole data range which raises the accuracy of the results, and 3) the validity of constant assumption can be checked by the linearity of the ln versus VKeywords
Electrical resistance measurement; Linear regression; Linearity; Physics; Propulsion; Schottky diodes; Semiconductor devices; Semiconductor diodes; Space technology; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21739
Filename
1484024
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