DocumentCode :
1094000
Title :
An improved forward I-V method for nonideal Schottky diodes with high series resistance
Author :
Lien, C.D. ; So, F.C.T. ; Nicolet, M.A.
Author_Institution :
California Institute of Technology, Pasadena, CA
Volume :
31
Issue :
10
fYear :
1984
fDate :
10/1/1984 12:00:00 AM
Firstpage :
1502
Lastpage :
1503
Abstract :
Two methods are described to obtain the value of the series resistance 
of a Schottky diode from its forward I-V characteristic. The value of 
is then used to plot the curve ln ( 
) versus 
which becomes a straight line even if ln 
versus 
does not. The ideality factor 
and the Schottky-barrier height 
of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of , 2) many data points are used over the whole data range which raises the accuracy of the results, and 3) the validity of constant assumption can be checked by the linearity of the ln versus VD curve. The methods are illustrated on the experimental data of a real diode.
of a Schottky diode from its forward I-V characteristic. The value of is then used to plot the curve ln ( ) versus which becomes a straight line even if ln versus does not. The ideality factor and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: 1) a linear regression can be used to calculate the value of , 2) many data points are used over the whole data range which raises the accuracy of the results, and 3) the validity of constant assumption can be checked by the linearity of the ln versus VKeywords :
Electrical resistance measurement; Linear regression; Linearity; Physics; Propulsion; Schottky diodes; Semiconductor devices; Semiconductor diodes; Space technology; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21739
Filename :
1484024
Link To Document :
