Title :
1.561-μm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre
Author :
Lealman, I.F. ; Rivers, Lelsey J ; Perrin, S.D. ; Robertson, Mike J.
Author_Institution :
British Telecom Res. Labs., Ipswich
fDate :
5/26/1994 12:00:00 AM
Abstract :
The authors report 1.56 μm MQW BH lasers that use a tapered active region and underlying passive guide to increase the laser spot size. Coupling losses to 10μm core cleaved singlemode fibre as low as 4.7 dB have been obtained for devices with threshold currents of ~12 mA at 20°C
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical couplers; optical fibres; optical losses; optical waveguides; semiconductor lasers; 1.56 mum; 10 mum; 12 mA; 20 C; 4.7 dB; InGaAsP-InP; InGaAsP/InP; MQW BH lasers; cleaved singlemode fibre coupling; core cleaved singlemode fibre; coupling losses; laser spot size; multiquantum well laser; tapered active layer; tapered active region; threshold currents; underlying passive guide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940570
